A 60‐GHz LNA with 18.6‐dB gain and 5.7‐dB NF in 90‐nm CMOS

A 60-GHz low-noise amplifier (LNA) is implemented in a commercial 90-nm RF CMOS process. A scalable model based on electromagnetic simulation is adopted to model on-chip microstrip transmission lines. First-pass silicon success has been achieved by accurate modeling of passive and active devices and careful layout. The three-stage LNA achieves 18.6-dB gain, a noise figure of 5.7 dB, and an input P1dB of −14.8 dBm. It consumes 24 mA from a 1.2-V supply. The total LNA die area with pads is 1.4 × 0.5 mm2. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 2056–2059, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25379