On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates
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V. Davydov | A. Smirnov | A. Zubrilov | N. Bochkareva | Y. Rebane | R. Gorbunov | V. Voronenkov | V. Kogotkov | P. Latyshev | Y. Lelikov | A. Leonidov | Y. Shreter | M. V. Virko | D. V. Tarhin