Resistive switching effects of HfO2 high-k dielectric

Resistive switching behavior of HfO"2 high-k dielectric has been studied as a promising candidate for emerging non-volatile memory technology. The low resistance ON state and high resistance OFF state can be reversibly altered under a low SET/RESET voltage of +/-3V. The memory device shows stable retention behavior with the resistance ratio between both states maintained greater than 103. The bipolar nature of the voltage-induced hysteretic switching properties suggests changes in film conductivity related to the formation and removal of electronically conducting paths due to the presence of oxygen vacancies induced by the applied electric field. The effect of annealing on the switching behavior was related to changes in compositional and structural properties of the film. A transition from bipolar to unipolar switching behavior was observed upon O"2 annealing which could be related to different natures of defect introduced in the film which changes the film switching parameters. The HfO"2 resistive switching device offers a promising potential for high density and low power memory application with the ease of processing integration.

[1]  S. Seo,et al.  Reproducible resistance switching in polycrystalline NiO films , 2004 .

[2]  Nevill Mott,et al.  Metal-Insulator Transition , 1968 .

[3]  S. O. Park,et al.  Electrical observations of filamentary conductions for the resistive memory switching in NiO films , 2006 .

[4]  Rainer Waser,et al.  Resistive switching in metal–ferroelectric–metal junctions , 2003 .

[5]  I. Yoo,et al.  Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications , 2005, IEEE Electron Device Letters.

[6]  S. Q. Liu,et al.  Electric-pulse-induced reversible resistance change effect in magnetoresistive films , 2000 .

[7]  Byung Joon Choi,et al.  Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition , 2005 .

[8]  A. Pasquarello,et al.  Migration of oxygen vacancy in HfO2 and across the HfO2∕SiO2 interface: A first-principles investigation , 2007 .

[9]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[10]  Heng-Yuan Lee,et al.  Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide , 2007 .

[11]  C. Gerber,et al.  Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals , 2001 .

[12]  P. Boolchand,et al.  Dual Chemical Role of Ag as an Additive in Chalcogenide Glasses , 1999 .

[13]  S. Fonash,et al.  High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs , 2005, IEEE Electron Device Letters.

[14]  L. Y. Chen,et al.  Reproducible unipolar resistance switching in stoichiometric ZrO2 films , 2007 .