Kinetics and dynamics of the regeneration of boron-oxygen defects in compensated n-type silicon
暂无分享,去创建一个
[1] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.
[2] Miss A.O. Penney. (b) , 1974, The New Yale Book of Quotations.
[3] Thomas de Quincey. [C] , 2000, The Works of Thomas De Quincey, Vol. 1: Writings, 1799–1820.
[4] S. Glunz,et al. Advanced lifetime spectroscopy: unambiguous determination of the electronic properties of the metastable defect in boron-doped CZ-Si , 2003, 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of.
[5] K. Bothe,et al. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon , 2004 .
[6] A. Herguth,et al. A New Approach to Prevent the Negative Impact of the Metastable Defect in Boron Doped CZ Silicon Solar Cells , 2006, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
[7] K. Bothe,et al. Electronically activated boron-oxygen-related recombination centers in crystalline silicon , 2006 .
[8] G. Hahn,et al. Investigations on the long time behavior of the metastable boron–oxygen complex in crystalline silicon , 2008 .
[9] Sébastien Dubois,et al. Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon , 2010 .
[10] V. Voronkov,et al. Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells , 2010 .
[11] K. Bothe,et al. Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon , 2010 .
[12] Giso Hahn,et al. Kinetics of the boron-oxygen related defect in theory and experiment , 2010 .
[13] Karsten Bothe,et al. Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon , 2011 .
[14] D. Macdonald,et al. Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon , 2011 .
[15] Andres Cuevas,et al. The impact of dopant compensation on the boron–oxygen defect in p‐ and n‐type crystalline silicon , 2011 .
[16] W. Kwapil,et al. Modeling majority carrier mobility in compensated crystalline silicon for solar cells , 2012 .
[17] M. Forster,et al. 19% efficiency heterojunction solar cells on Cz wafers from non-blended Upgraded Metallurgical Silicon , 2012, 2012 38th IEEE Photovoltaic Specialists Conference.
[18] S. Glunz,et al. Improved quantitative description of Auger recombination in crystalline silicon , 2012 .
[19] G. Hahn,et al. Influence of hydrogen on the regeneration of boron-oxygen related defects in crystalline silicon , 2013 .
[20] G. Hahn,et al. Record Efficiency of PhosTop Solar Cells from n-type Cz UMG Silicon Wafers , 2013 .
[21] B. Lim,et al. (Invited) Boron-Oxygen Related Lifetime Degradation in p-type and n-type Silicon , 2013 .
[22] S. Wenham,et al. Advanced Bulk Defect Passivation for Silicon Solar Cells , 2014, IEEE Journal of Photovoltaics.
[23] Giso Hahn,et al. Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes , 2014 .
[24] Giuseppe Galbiati,et al. Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells , 2014 .
[25] G. Hahn,et al. From simulation to experiment: Understanding BO-regeneration kinetics , 2015 .
[26] Wilhelm Warta,et al. Light-induced Degradation and Regeneration in n-type Silicon , 2015 .
[27] M. Schubert,et al. Characterization and modelling of the boron-oxygen defect activation in compensated n-type silicon , 2015 .
[28] S. Wenham,et al. Advanced Hydrogenation of Dislocation Clusters and Boron-oxygen Defects in Silicon Solar Cells , 2015 .
[29] S. Wenham,et al. Fast and slow lifetime degradation in boron‐doped Czochralski silicon described by a single defect , 2016 .
[30] Xinbo Yang,et al. Upgraded metallurgical-grade silicon solar cells with efficiency above 20% , 2016 .
[31] S. Wenham,et al. Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model , 2016 .
[32] S. Wenham,et al. Implications of Accelerated Recombination-Active Defect Complex Formation for Mitigating Carrier-Induced Degradation in Silicon , 2016, IEEE Journal of Photovoltaics.
[33] V. Voronkov,et al. Permanent deactivation of boron–oxygen recombination centres in silicon , 2016 .
[34] S. Wenham,et al. Boron-Oxygen Defect Formation Rates and Activity at Elevated Temperatures , 2016 .
[35] G. Hahn,et al. Of apples and oranges : why comparing BO regeneration rates requires injection level correction , 2016 .
[36] Gorjan Alagic,et al. #p , 2019, Quantum information & computation.
[37] D. Macdonald,et al. 21.1% UMG Silicon Solar Cells , 2017, IEEE Journal of Photovoltaics.
[38] Jan Schmidt,et al. Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity , 2017 .
[39] A. Herguth. On the meaning(fullness) of the intensity unit ‘suns’ in light induced degradation experiments , 2017 .
[40] Recent insights into boron-oxygen related degradation: Evidence of a single defect , 2017 .
[41] G. Hahn,et al. Degradation of Surface Passivation on Crystalline Silicon and Its Impact on Light-Induced Degradation Experiments , 2017, IEEE Journal of Photovoltaics.
[42] Wilhelm Warta,et al. Degradation of Crystalline Silicon Due to Boron–Oxygen Defects , 2017, IEEE Journal of Photovoltaics.
[43] D. Macdonald,et al. Activation Kinetics of the Boron–oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence , 2017, IEEE Journal of Photovoltaics.
[44] D. Macdonald,et al. Carrier induced degradation in compensated n-type silicon solar cells: Impact of light-intensity, forward bias voltage, and temperature on the reaction kinetics , 2017 .
[45] G. Hahn,et al. Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells , 2017 .
[46] S. Wenham,et al. Hydrogen induced degradation: A possible mechanism for light- and elevated temperature- induced degradation in n-type silicon , 2018, Solar Energy Materials and Solar Cells.
[47] D. Macdonald,et al. Complete regeneration of BO-related defects in n-type upgraded metallurgical-grade Czochralski-grown silicon heterojunction solar cells , 2018, Applied Physics Letters.
[48] D. Macdonald,et al. Impact of Tabula Rasa and Phosphorus Diffusion Gettering on 21% Heterojunction Solar Cells Based on n-Type Czochralski-Grown Upgrade Metallurgical-Grade Silicon , 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
[49] Tsuyoshi Murata,et al. {m , 1934, ACML.
[50] P. Alam. ‘W’ , 2021, Composites Engineering.
[51] P. Alam. ‘G’ , 2021, Composites Engineering: An A–Z Guide.
[52] P. Alam. ‘A’ , 2021, Composites Engineering: An A–Z Guide.
[53] P. Alam. ‘N’ , 2021, Composites Engineering: An A–Z Guide.
[54] P. Alam. ‘S’ , 2021, Composites Engineering: An A–Z Guide.