论文信息 - Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas

Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas

The etch pits on the C-face 4H-SiC substrate was produced by chlorine trifluoride gas at various temperatures. The etch pit density showed the comparable value to the current dislocation density level of the Si-face 4H-SiC, when the etching was performed around 713 K. Thus, the etch pit density obtained by this technique is expected to reveal the crystal quality.

Tomohisa Kato | Hitoshi Habuka | Toshimitsu Kanai | K. Furukawa

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