Heteromaterial gate tunnel field effect transistor with lateral energy band profile modulation

A tunnel field effect transistor (TFET) device with a heteromaterial gate structure was introduced, and the influence of the lateral energy band profile modulation effect on the performance of TFET devices has been investigated. The two-dimensional numerical simulations demonstrated that a local minimum of the conduction band in the channel was formed by work function mismatch, which resulted in the abrupt transition between the on- and off-states and significant drive current enhancement. In particular, these unique features could be manipulated by engineering the heteromaterial and the gate length. This work reveals an effective method to improve the performance of nanoscale TFETs.

[1]  K. Saraswat,et al.  A variable-work-function polycrystalline-Si/sub 1-x/Ge/sub x/ gate material for submicrometer CMOS technologies , 1991, IEEE Electron Device Letters.

[2]  Qin Zhang,et al.  Low-subthreshold-swing tunnel transistors , 2006, IEEE Electron Device Letters.

[3]  I. Eisele,et al.  Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- $\kappa$ Gate Dielectrics , 2009, IEEE Transactions on Electron Devices.

[4]  Youngki Yoon,et al.  Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance , 2010 .

[5]  K. Maex,et al.  Tunnel field-effect transistor without gate-drain overlap , 2007 .

[6]  J. Appenzeller,et al.  Band-to-band tunneling in carbon nanotube field-effect transistors. , 2004, Physical review letters.

[7]  G. Amaratunga,et al.  Silicon surface tunnel transistor , 1995 .

[8]  Byung-Gook Park,et al.  Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec , 2007, IEEE Electron Device Letters.

[9]  Sorin Cristoloveanu,et al.  Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator , 2009 .

[10]  D. Antoniadis,et al.  Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions , 2008, IEEE Electron Device Letters.

[11]  Xing Zhou,et al.  Exploring the novel characteristics of hetero-material gate field-effect transistors (HMGFETs) with gate-material engineering , 2000 .

[12]  W. Choi,et al.  Hetero-Gate-Dielectric Tunneling Field-Effect Transistors , 2010, IEEE Transactions on Electron Devices.

[13]  R. Fair,et al.  Zener and avalanche breakdown in As-implanted low-voltage Si n-p junctions , 1976, IEEE Transactions on Electron Devices.

[14]  K. Maex,et al.  Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects , 2006, IEEE Electron Device Letters.