Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses.

The magnetization direction of a metallic magnet has generally been controlled by a magnetic field or by spin-current injection into nanosized magnetic cells. Both these methods use an electric current to control the magnetization direction; therefore, they are energy consuming. Magnetization control using an electric field is considered desirable because of its expected ultra-low power consumption and coherent behaviour. Previous experimental approaches towards achieving voltage control of magnetization switching have used single ferromagnetic layers with and without piezoelectric materials, ferromagnetic semiconductors, multiferroic materials, and their hybrid systems. However, the coherent control of magnetization using voltage signals has not thus far been realized. Also, bistable magnetization switching (which is essential in information storage) possesses intrinsic difficulties because an electric field does not break time-reversal symmetry. Here, we demonstrate a coherent precessional magnetization switching using electric field pulses in nanoscale magnetic cells with a few atomic FeCo (001) epitaxial layers adjacent to a MgO barrier. Furthermore, we demonstrate the realization of bistable toggle switching using the coherent precessions. The estimated power consumption for single switching in the ideal equivalent switching circuit can be of the order of 10(4)k(B)T, suggesting a reduction factor of 1/500 when compared with that of the spin-current-injection switching process.

[1]  I. Mertig,et al.  Magnetoelectric coupling at metal surfaces. , 2013, Nature nanotechnology.

[2]  A. K. Mohanty,et al.  A First Principles Study , 2012 .

[3]  Masashi Shiraishi,et al.  Voltage-Assisted Magnetization Switching in Ultrathin Fe80Co20 Alloy Layers , 2009 .

[4]  C Gough,et al.  Introduction to Solid State Physics (6th edn) , 1986 .

[5]  J. Katine,et al.  Time-resolved reversal of spin-transfer switching in a nanomagnet. , 2004, Physical review letters.

[6]  H. Ohno,et al.  Electrical Manipulation of Magnetization Reversal in a Ferromagnetic Semiconductor , 2003, Science.

[7]  Sung-chul Shin,et al.  Spin engineering of CoPd alloy films via the inverse piezoelectric effect , 2003 .

[8]  A. Tulapurkar,et al.  Large voltage-induced magnetic anisotropy change in a few atomic layers of iron. , 2009, Nature nanotechnology.

[9]  J. C. Sloncxewski,et al.  Current-driven excitation of magnetic multilayers , 2003 .

[10]  S. G. Kim,et al.  Novel magnetostrictive memory device , 2000 .

[11]  N. Mathur,et al.  Multiferroic and magnetoelectric materials , 2006, Nature.

[12]  J. Pflaum,et al.  Gilbert damping and g-factor in FexCo1−x alloy films , 1995 .

[13]  Junhao Chu,et al.  Surface magnetoelectric effect in ferromagnetic metal films. , 2008, Physical review letters.

[14]  Hideo Ohno,et al.  Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures , 2010 .

[15]  Shan X. Wang,et al.  Electric-field control of local ferromagnetism using a magnetoelectric multiferroic. , 2008, Nature materials.

[16]  T. Oda,et al.  Finite electric field effects in the large perpendicular magnetic anisotropy surface Pt/Fe/Pt(001): a first-principles study. , 2009, Physical review letters.

[17]  A. Marty,et al.  Electric Field-Induced Modification of Magnetism in Thin-Film Ferromagnets , 2007, Science.

[18]  H. Ohno,et al.  Simulation of magnetization switching by electric-field manipulation of magnetic anisotropy , 2010 .

[19]  C. Kittel Introduction to solid state physics , 1954 .

[20]  Hitoshi Kanai,et al.  Analysis of thermal magnetic noise in spin-valve GMR heads by using micromagnetic simulation , 2005 .

[21]  A. Panchula,et al.  Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers , 2004, Nature materials.

[22]  Phase coherent precessional magnetization reversal in microscopic spin valve elements. , 2002, Physical review letters.

[23]  S. Yuasa,et al.  Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions , 2004, Nature materials.

[24]  U. Ebels,et al.  Spin-torque influence on the high-frequency magnetization fluctuations in magnetic tunnel junctions. , 2007, Physical review letters.

[25]  A. Freeman,et al.  Giant modification of the magnetocrystalline anisotropy in transition-metal monolayers by an external electric field. , 2009, Physical review letters.

[26]  H. Ohno,et al.  Electric-field control of ferromagnetism , 2000, Nature.

[27]  Masashi Shiraishi,et al.  Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions , 2010 .

[28]  H. Ohno,et al.  Magnetization vector manipulation by electric fields , 2008, Nature.

[29]  Yoshishige Suzuki,et al.  Quantitative Evaluation of Voltage-Induced Magnetic Anisotropy Change by Magnetoresistance Measurement , 2011 .

[30]  J. Stöhr,et al.  Electric field induced magnetic anisotropy in a ferromagnet. , 2009, Physical review letters.

[31]  Berger Emission of spin waves by a magnetic multilayer traversed by a current. , 1996, Physical review. B, Condensed matter.

[32]  P. Curie Sur la symétrie dans les phénomènes physiques, symétrie d'un champ électrique et d'un champ magnétique , 1894 .