论文信息 - Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions - 字舞流文

Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions

G. Condorelli | F. Giannazzo | F. Portuese | F. La Via | G. Abbondanza | L. Perdicaro | M. Mauceri | D. Crippa | G. Valente | G. Pistone