Piezo-Hall coefficients of n-type silicon

The effect of uniaxial mechanical stress on the Hall coefficient of n‐type silicon has been measured for various crystallographic orientations, and piezo‐Hall coefficients P12 and P11‐P44 have been derived for electron concentrations n between 1014 and 1016 cm−3 and temperatures ranging from −80 to +100 °C. In this range the piezo‐Hall effect is found to be as important as the piezoresistance effect which is understood in terms of the many‐valley band structure of silicon with anisotropic energy minima. For Hall plates in the (100) and the (110) plane of silicon the resulting longitudinal and transverse piezo‐Hall coefficients at room temperature are plotted as a function of their orientation in the plane. It turns out that the piezo‐Hall as well as the piezoresistance effects are minimized for a Hall plate in the (110) plane with the current flow roughly parallel to 〈111〉.