Application of Solid Immersion Lens to High-Resolution Photoluminescence Imaging of Patterned GaAs Quantum Wells

The solid immersion lens has been applied to high-resolution microscopic photoluminescence (PL) imaging of a strip-line-patterned GaAs quantum well structure. An improved resolution corresponding to the numerical aperture of 1.25 was realized. The enhanced emission of PL from edges, and the significantly increased collection efficiency of PL were demonstrated.