Diffusion of Gallium and Indium in β‐Titanium

Impurity diffusion coefficients of Ga and In, DGa and DIn, in β-Ti in the temperature range from 1173 to 1823 K are determined by extrapolating the concentration dependence of the interdiffusion coefficient to infinite dilution of the solute. In the whole temperature range the relation D > DGa > DIn is recognized. The Arrhenius plots of the impurity diffusion coefficients show an upward curvature similar to that recognized in the self-diffusion in β-Ti. The curved Arrhenius plot is explained by the mechanism of phonon-assisted diffusion jumps via monovacancies. The activation energy for the impurity diffusion is proportional to the square of the radius of the diffusing atom, suggesting that the size effect is dominant in the impurity diffusion in β-Ti.

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