Radiative and nonradiative recombination kinetics of indirect bound excitons studied by time-resolved level anticrossing experiments

Time-resolved investigation of the level anticrossing effect in exciton emission is first used to determine separately the radiative and nonradiative indirect bound exciton lifetimes in a semiconductor crystal using GaSe as an example. A theoretical treatment of the experimental level anticrossing signal is carried out for different instances of the indirect bound exciton lifetime. The indirect bound exciton radiative lifetime τr = 4.8 µs is found to be about five times shorter than the nonradiative lifetime τ0 = 19 µs and about two orders of magnitude longer than the radiative lifetime of direct bound excitons in the same compound. Within the two-level scheme, the value of the indirect bound exciton spin relaxation time T1 is assessed to be 100 µs.

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