Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects.

Recently, significant attention has been paid to the resistance switching (RS) behaviour in Fe3O4 and it was explained through the analogy of the electrically driven metal-insulator transition based on the quantum tunneling theory. Here, we propose a method to experimentally support this explanation and provide a way to tune the critical switching parameter by introducing self-aligned localized impurities through the growth of Fe3O4 thin films on stepped SrTiO3 substrates. Anisotropic behavior in the RS was observed, where a lower switching voltage in the range of 10(4) V cm(-1) is required to switch Fe3O4 from a high conducting state to a low conducting state when the electrical field is applied along the steps. The anisotropic RS behavior is attributed to a high density array of anti-phase boundaries (APBs) formed at the step edges and thus are aligned along the same direction in the film which act as a train of hotspot forming conduits for resonant tunneling. Our experimental studies open an interesting window to tune the electrical-field-driven metal-insulator transition in strongly correlated systems.

[1]  I. Shvets,et al.  Magnetic and transport properties of epitaxial stepped Fe3O4(100) thin films , 2014 .

[2]  J. Wu,et al.  Spin and orbital moments of nanoscale Fe3O4 epitaxial thin film on MgO/GaAs(100) , 2014, 1503.07902.

[3]  O. Mryasov,et al.  Magnetization States of All-Oxide Spin Valves Controlled by Charge-orbital Ordering of Coupled Ferromagnets , 2013, Scientific Reports.

[4]  E. Saitoh,et al.  Observation of the spin Seebeck effect in epitaxial Fe3O4 thin films , 2012, 1212.3142.

[5]  Hongzhou Zhang,et al.  Equilibrium faceting formation in vicinal Al2O3 (0001) surface caused by annealing , 2012 .

[6]  Mohamed Abid,et al.  Transversal magneto-resistance in epitaxial Fe3O4 and Fe3O4/NiO exchange biased system , 2012 .

[7]  A. Swartz,et al.  Electric field control of the Verwey transition and induced magnetoelectric effect in magnetite , 2012, 1202.6460.

[8]  D. Natelson,et al.  Statistical distribution of the electric field-driven switching of the Verwey state in Fe3O4 , 2012, 1201.0772.

[9]  J. Switzer,et al.  Resistance switching in electrodeposited polycrystalline Fe3O4 films , 2011 .

[10]  Zhi-Min Liao,et al.  Memory and threshold resistance switching in Ni/NiO core-shell nanowires. , 2011, Nano letters.

[11]  D. Natelson,et al.  Interfacial transport properties between a strongly correlated transition metal oxide and a metal: Contact resistance in Fe3O4/M (M=Cu, Au, Pt) nanostructures , 2010 .

[12]  Mohamed Abid,et al.  Probing one antiferromagnetic antiphase boundary and single magnetite domain using nanogap contacts. , 2010, Nano letters.

[13]  L. Calmels,et al.  Electronic structure near an antiphase boundary in magnetite , 2010 .

[14]  D. Natelson,et al.  Interplay of bulk and interface effects in the electric-field-driven transition in magnetite , 2009, 0912.5374.

[15]  Qing Zhao,et al.  Resistive switching and metallic-filament formation in Ag(2)S nanowire transistors. , 2009, Small.

[16]  D. Natelson,et al.  Origin of hysteresis in resistive switching in magnetite is Joule heating , 2009, 0905.3510.

[17]  W. Lu,et al.  High-density Crossbar Arrays Based on a Si Memristive System , 2008 .

[18]  E. Snoeck,et al.  Giant planar Hall effect in epitaxial Fe 3 O 4 thin films and its temperature dependence , 2008 .

[19]  A. Sawa.  Resistive switching in transition metal oxides , 2008 .

[20]  I. Shvets,et al.  In-plane magnetic anisotropies inFe3O4films on vicinal MgO(100) , 2008 .

[21]  W. Ching,et al.  Giant magnetic moment in epitaxial Fe 3 O 4 thin films on MgO(100) , 2008 .

[22]  J. S. Lee,et al.  Occurrence of both unipolar memory and threshold resistance switching in a NiO film. , 2008, Physical review letters.

[23]  I. Shvets,et al.  Concept of a nanowire array magnetoresistance device , 2008 .

[24]  Naoto Nagaosa,et al.  Field-induced metal-insulator transition and switching phenomenon in correlated insulators , 2007, 0712.1390.

[25]  Douglas Natelson,et al.  Electrically driven phase transition in magnetite nanostructures. , 2007, Nature materials.

[26]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[27]  Simon J. Henley,et al.  Laser direct write of silver nanoparticles from solution onto glass substrates for surface-enhanced Raman spectroscopy , 2007 .

[28]  K. Xia,et al.  Spin-filter effect in magnetite nanowire. , 2006, Nano letters.

[29]  I. Shvets,et al.  Magnetoresistance enhancement in epitaxial magnetite films grown on vicinal substrates , 2005 .

[30]  Jonathan S. Lindsey,et al.  Molecular Memories That Survive Silicon Device Processing and Real-World Operation , 2003, Science.

[31]  T. Palstra,et al.  Spin-polarized transport across sharp antiferromagnetic boundaries. , 2002, Physical review letters.

[32]  M. Ziese.  Extrinsic magnetotransport phenomena in ferromagnetic oxides , 2001, cond-mat/0111263.

[33]  H. Kronmüller,et al.  The influence of a finite bandwidth on the Verwey transition in magnetite , 2000 .

[34]  Vinayak P. Dravid,et al.  Fabrication and properties of heteroepitaxial magnetite (Fe3O4) tunnel junctions , 1998 .

[35]  J. Chapman,et al.  Origin of the Anomalous Magnetic Behavior in Single Crystal Fe 3 O 4 Films , 1997 .

[36]  Kawakami,et al.  Symmetry-Induced Magnetic Anisotropy in Fe Films Grown on Stepped Ag(001). , 1996, Physical review letters.

[37]  Spada,et al.  Anomalous moment and anisotropy behavior in Fe3O4 films. , 1996, Physical review. B, Condensed matter.

[38]  H. K. Henisch,et al.  Switching in organic polymer films , 1974 .

[39]  E. Verwey,et al.  Electronic Conduction of Magnetite (Fe3O4) and its Transition Point at Low Temperatures , 1939, Nature.