The Evolution of the Theory for the Voltage-Current Characteristic of P-N Junctions

The rectifying action in semiconductor p-n junctions is controlled essentially by the equilibrium densities, diffusion constants, and recombination times of minority carriers. The low-level behavior of germanium junctions at room temperature is adequately described by a theory which is based on the rate of diffusion and recombination of minority carriers on either side of the barrier region. It is necessary to include the effects of carrier recombination and generation in the barrier region to explain the low-level behavior of silicon. At high current densities, the junctions depart from the ideal low-level rectifier law because of effects associated with majority carrier modulation. As a consequence of recombination current to the barrier region at low levels and conductivity modulation effects at high levels, the simple I8(exp qV/kT-1) behavior is rarely observed in silicon junctions at room temperature.

[1]  W. Read,et al.  Statistics of the Recombinations of Holes and Electrons , 1952 .

[2]  D. E. Thomas,et al.  Diffused emitter and base silicon transistors , 1956 .

[3]  K. Mckay.  Avalanche Breakdown in Silicon , 1954 .

[4]  H. Statz,et al.  Excess Surface Currents on Germanium and Silicon Diodes , 1957 .

[5]  K. Mckay,et al.  ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM , 1953 .

[6]  William Shockley,et al.  The theory of p-n junctions in semiconductors and p-n junction transistors , 1949, Bell Syst. Tech. J..

[7]  A. G. Chynoweth,et al.  Internal Field Emission in Silicon p-n Junctions , 1957 .

[8]  E. Rittner.  Extension of the Theory of the Junction Transistor , 1954 .

[9]  H. Kleinknecht,et al.  Einkristalle undpn-Schichtkristalle aus Silizium , 1954 .

[10]  D. A. Kleinman,et al.  The forward characteristic of the pin diode , 1956 .

[11]  W. M. Webster.  On the Variation of Junction-Transistor Current-Amplification Factor with Emitter Current , 1954, Proceedings of the IRE.

[12]  R. N. Hall,et al.  Power Rectifiers and Transistors , 1952, Proceedings of the IRE.

[13]  C. Sah,et al.  Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics , 1957, Proceedings of the IRE.

[14]  N. Mott.  The Theory of Crystal Rectifiers , 1939 .

[15]  I. M. Ross,et al.  The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity , 1956, Proceedings of the IRE.

[16]  E. Pell.  Reverse Current and Carrier Lifetime as a Function of Temperature in Germanium Junction Diodes , 1955 .

[17]  High-voltage conductivity-modulated silicon rectifier , 1957 .

[18]  S. L. Miller.  Avalanche Breakdown in Germanium , 1955 .

[19]  L. Esaki.  New Phenomenon in Narrow Germanium p-n Junctions , 1958 .

[20]  William Shockley,et al.  Theory and Experiment for a Germanium p − n Junction , 1951 .

[21]  M. Cutler,et al.  Surface Leakage Current in Silicon Fused Junction Diodes , 1957, Proceedings of the IRE.