论文信息 - 1D Modeling of SOI MOSFETs Using Distinct Quasi-Fermi Potentials

1D Modeling of SOI MOSFETs Using Distinct Quasi-Fermi Potentials

Distinct electron and hole quasi-Fermi potentials, ϕ<inf>fn</inf>, and ϕ<inf>fp</inf>, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of ϕ<inf>fn</inf>, ϕ<inf>fp</inf>, in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of ϕ<inf>fp</inf>(t) depends on the device history and generation/recombination rates.

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