Spin-coating of Ge23Sb7S70 chalcogenide glass thin films

Thin film Ge23Sb7S70 chalcogenide glass has emerged as an important material system for photonic applications due to its high non-linear refractive index. However, one of the challenges is developing low-cost methods to deposit films of glassy material while retaining glass stoichiometry and high film quality. In this paper, we demonstrate a spin-coating technique for the deposition of such films. The dissolution mechanisms of Ge23Sb7S70 in different solvents are studied in order to select the optimal solvent for film deposition. We show that the use of amine-based solvents allow the deposition of stoichiometric films in contrast to alkaline solutions. Films with low surface roughness (RMS roughness <5 nm) and controlled thickness (100–600 nm) can be deposited from solutions. We also show that annealing the films in vacuum decreases the amount of residual solvent, the presence of which is expected to lead to variation in optical properties of the thin films. 2009 Published by Elsevier B.V.

[1]  H. Ticha,et al.  Far Infrared Spectra and Bonding Arrangement in Some Ge–Sb–S Glasses , 2000 .

[2]  Craig B. Arnold,et al.  Mode tuning of quantum cascade lasers through optical processing of chalcogenide glass claddings , 2006 .

[3]  C. Waits,et al.  Development of chalcogenide glass photoresists for gray scale lithography , 2006 .

[4]  Andrew G. Glen,et al.  APPL , 2001 .

[5]  J. Neilson,et al.  Fabrication of nano-gratings in arsenic sulphide films , 2007 .

[6]  K. Matsuishi,et al.  Structural relaxation in the glass transition region of chalcogenide amorphous semiconductors (GeS2)1−Y(Sb2S3)Y , 1998 .

[7]  Robert W. Eason,et al.  Pulsed laser deposition of Ga‐La‐S chalcogenide glass thin film optical waveguides , 1993 .

[8]  G. Chern,et al.  Spin coated amorphous chalcogenide films: Structural characterization , 1983 .

[9]  Salman Rosenwaks,et al.  Photoinduced phenomena in spin-coated vitreous As2S3 and AsSe films , 1995 .

[10]  Annie Pradel,et al.  CHALCOGENIDE THIN FILMS DEPOSITED BY RADIO-FREQUENCY SPUTTERING , 2004 .

[11]  F. Wise,et al.  Highly nonlinear As-S-Se glasses for all-optical switching. , 2002, Optics letters.

[12]  M. Couzi,et al.  Effect of the substitution of S for Se on the structure and non-linear optical properties of the glasses in the system Ge0.18Ga0.05Sb0.07S0.70- xSex , 2006 .

[13]  Interference grating fabrication in spin-coated As2S3 films , 1991 .

[14]  A. E. Owen,et al.  Photo-induced structural and physico-chemical changes in amorphous chalcogenide semiconductors , 1985 .

[15]  S. Mamedov,et al.  Dissolution kinetics of glassy arsenic sulfide in alkali and amine solutions , 1994 .

[16]  B. Luther-Davies,et al.  Photosensitive post-tuning of chalcogenide photonic crystal waveguides , 2007, COIN-ACOFT 2007 - Joint International Conference on the Optical Internet and the 32nd Australian Conference on Optical Fibre Technology.

[17]  B.J. Eggleton,et al.  Local tuning of photonic crystal cavities using chalcogenide glasses , 2007, 2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science.

[18]  T. Wágner,et al.  Physico-chemical properties of spin-coated Ag–As–Sb–S films , 2005 .

[19]  Martin Richardson,et al.  Direct femtosecond laser writing of waveguides in As2S3 thin films. , 2004, Optics letters.

[20]  K. Tada,et al.  Wavelength trimming technology for multiple-wavelength distributed-feedback laser arrays , 1996, Conference Digest. 15th IEEE International Semiconductor Laser Conference.

[21]  Martin Wegener,et al.  Direct Laser Writing of Three‐ Dimensional Photonic Crystals with a Complete Photonic Bandgap in Chalcogenide Glasses , 2006 .

[22]  G. Chern,et al.  Spin‐coated amorphous chalcogenide films , 1982 .

[23]  A. McGhie,et al.  Spin coated amorphous chalcogenide films: Thermal properties , 1983 .

[24]  Craig B. Arnold,et al.  Laser Direct-Write Processing , 2007 .

[25]  M. Ferenets,et al.  Thin Solid Films , 2010 .

[26]  G. Chern,et al.  Application of spin‐coated As2S3 thin films in a high resolution trilayer resist system , 1984 .

[27]  T. Wágner,et al.  Selective wet-etching and characterization of chalcogenide thin films in inorganic alkaline solutions , 2007 .

[28]  K. Petkov,et al.  Photoinduced changes in the linear and non-linear optical properties of chalcogenide glasses , 1999 .

[29]  Alberto Piqué,et al.  Laser Direct-Write Techniques for Printing of Complex Materials , 2007 .

[30]  J. Tauc,et al.  Absorption edge and internal electric fields in amorphous semiconductors , 1970 .

[31]  R. Swanepoel Determination of the thickness and optical constants of amorphous silicon , 1983 .

[32]  G. G. Stokes "J." , 1890, The New Yale Book of Quotations.

[33]  T. Wágner,et al.  Selective wet-etching of undoped and silver photodoped amorphous thin films of chalcogenide glasses in inorganic alkaline solutions , 2006 .

[34]  Steve W. Martin,et al.  Effect of the substitution of S for Se on the structure of the glasses in the system Ge0.23Sb0.07S0.70−xSex , 2005 .

[35]  A. E. Owen,et al.  Calculation of the thickness and optical constants of amorphous arsenic sulphide films from their transmission spectra , 1992 .

[36]  Terutoshi Kanamori,et al.  Chalcogenide glass fibers for mid-infrared transmission , 1984 .