High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates
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R. Lai | M. Barsky | X. Mei | A. Oki | M. Wojtowicz | D. Buttari | M. Biedenbender | R. Tsai | Y. Chou | T. Block | D. Leung | D. Eng | C. H. Lin