Comparison Of Electron Beam And Optical Projection Lithography In The Region Of One Micrometer

The purpose of this paper is to discuss the practical trade-offs of electron beam direct-write and optical projection techniques in terms of resolution and linewidth control for device geometries in the one micrometer feature region. Overlay, field size, throughput and other economic issues will not be addressed. It is generally understood that the overlay accuracy of E-beam direct-write is the bestl among the various lithographic approaches.