Carrier transport across heterojunction interfaces

Abstract A general theory is presented to describe the carrier transport across heterojunction interfaces. In matching the boundary conditions at the interface, the conservation of total energy and perpendicular momentum is assumed and the difference of effective masses on two sides of the junction is taken into account. The quantum mechanical transmission coefficient is calculated by a combined numerical and WKB method. Application of the present model to an AlxGa1−xAsGaAs N-n heterojunction is performed and it gives rise to rectifying characteristics together with non-saturated reverse current. Comparison with the classical thermionic emission model is made to show the significance of tunneling and effect of quantum mechanical reflection.

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