Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory

In recent years, resistance changes random access memory (RRAM) which shows reversible bistable resistance states by applied voltage has been studied as one of the alternatives of next-generation nonvolatile memory due to its excellent device characteristics including scalability, speed, and retention. Here, we report on the noncharge-based NiO RRAM device characteristics with load resistor as well as the simulation results of controlled conducting filament configuration. The RRAM device with load resistor showed super performances including highly reduction of switching current (~1 order) and significantly improved switching voltage distribution (30% reduction).

[1]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[2]  K. Kinoshita,et al.  Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model , 2007 .

[3]  S. O. Park,et al.  Electrical observations of filamentary conductions for the resistive memory switching in NiO films , 2006 .

[4]  M. Aoki,et al.  Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET , 2008, IEEE Transactions on Electron Devices.

[5]  S. Seo,et al.  Reproducible resistance switching in polycrystalline NiO films , 2004 .

[6]  Charles M. Lieber,et al.  Carbon nanotube-based nonvolatile random access memory for molecular computing , 2000, Science.

[7]  J. S. Lee,et al.  Occurrence of both unipolar memory and threshold resistance switching in a NiO film. , 2008, Physical review letters.

[8]  S. Q. Liu,et al.  Electric-pulse-induced reversible resistance change effect in magnetoresistive films , 2000 .

[9]  S. H. Jeon,et al.  A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories , 2007 .

[10]  R. Waser,et al.  Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.

[11]  S. Möller,et al.  A polymer/semiconductor write-once read-many-times memory , 2003, Nature.

[12]  B. Kahng,et al.  Random Circuit Breaker Network Model for Unipolar Resistance Switching , 2008 .

[13]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[14]  Tetsuro Tamura,et al.  Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides , 2006 .

[15]  Jung-Hyun Lee,et al.  Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. , 2009, Nano letters.