Study on fundamental defects and their effect on GaAs device properties

Our understanding of the causal relationship between material parameters and GaAs FET threshold voltage is briefly presented from the viewpoint of point defect reactions. Primarily, dislocations in LEC-grown GaAs are focused on in light of threshold voltage scattering, and point defects associated with dislocations attributable to threshold voltage scattering are discussed. High temperature post-growth annealing results in the increase in [EL2], which provides homogenization of device characteristics, even when the crystal contains dislocations. A possible defect model around dislocations and evolution of such defects in crystal growth and annealing cycles are proposed, where As-interstitial is mainly considered.

[1]  T. Sigmon,et al.  Model of threshold-voltage fluctuations in GaAs MESFET's , 1987, IEEE Electron Device Letters.

[2]  A. Morozov,et al.  Native Point Defects and Nonstoichiometry in GaAs (I). Homogeneity Region of Gallium Arsenide , 1986 .

[3]  T. Ogawa.  Correlation between Infrared-Light Scattering and Absorption Images in an In-Doped LEC GaAs Crystal , 1986 .

[4]  S. Miyazawa,et al.  Mechanism for the threshold voltage shift of a GaAs field‐effect transistor around dislocations , 1986 .

[5]  M. Suzuki,et al.  A GaAs 16-kbit static RAM using dislocation-free crystal , 1986, IEEE Transactions on Electron Devices.

[6]  R. Y. Koyama,et al.  GaAs field‐effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations , 1985 .

[7]  N. Matsunaga,et al.  Measurements of Compositional Change in Semi-Insulating GaAs Single Crystals by Precise Lattice Parameter Measurements , 1985 .

[8]  T. Figielski.  Mechanism for the creation of antisite defects, during combined climb-glide motion of dislocations in sphalerite-structure crystals , 1985 .

[9]  F. Hyuga.  Effect of Dislocations on Sheet Carrier Concentration of Si-Implanted, Semi-Insulating, Liquid-Encapsulated Czochralski Grown GaAs , 1985 .

[10]  R. Thomas,et al.  Low dislocation, semi-insulating In-doped GaAs crystals , 1984 .

[11]  A. Hunter,et al.  Substrate effects on the threshold voltage of GaAs field‐effect transistors , 1984 .

[12]  I. Fujimoto.  Characterisation of Stoichiometry in GaAs by X-Ray Intensity Measurements of Quasi-Forbidden Reflections , 1984 .

[13]  T. Honda,et al.  Improvement of crystal homogeneities in liquid‐encapsulated Czochralski grown, semi‐insulating GaAs by heat treatment , 1984 .

[14]  J. S. Blakemore,et al.  Semi-Insulating III-V Materials: Kah-Nee-Ta 1984 , 1984 .

[15]  Shintaro Miyazawa,et al.  Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor , 1983 .

[16]  L. Ledebo,et al.  Evidence that the gold donor and acceptor in silicon are two levels of the same defect , 1983 .

[17]  I. Grant,et al.  Direct observation of the principal deep level (EL2) in undoped semi‐insulating GaAs , 1983 .

[18]  T. Mizutani,et al.  Leakage Current IL Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAs , 1982 .

[19]  Michio Tajima,et al.  Characterization of Nonuniformity in Semi-Insulating LEC GaAs by Photoluminescence Spectroscopy , 1982 .

[20]  M. Kamińska,et al.  Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors , 1982 .

[21]  S. Makram-Ebeid,et al.  Semi-insulating III-V materials : Evian 1982 , 1982 .

[22]  P. Jay.  Semi-insulating III–v materials , 1980 .

[23]  D. Stirland,et al.  Arsenic precipitation at dislocations in GaAs substrate material , 1980 .

[24]  R. Tuyl,et al.  High-speed integrated logic with GaAs MESFET's , 1974 .

[25]  G. L. Pearson,et al.  Ohmic Contacts to Solution‐Grown Gallium Arsenide , 1969 .