Design tradeoff for SiGe 0.35-μm BiCMOS low-power and high figure-of-merit LNA

A 5.4-mW ultra-low dc power low-noise amplifier (LNA) at 5.5 GHz, based on 0.35-μm BiCMOS technology, is presented. The trade-off between the NF and linearity for LNA circuit design has been investigated. Furthermore, the use of the HBT-cascade-MOS methodology simultaneously satisfies the trade-off between the noise figure (NF) and linearity of the LNA. This amplifier achieves a gain/NF × PDC ratio figure of merit of 0.774 (1/mW), which is the best reported at the 5–6-GHz band, and is suitable for wireless LAN applications. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 47: 65–68, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21083

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