Iterative Deconvolution for Exposure Planning in Scanning Laser Lithography

Laser scanning lithography is a maskless method for exposing photoresist during semiconductor manufacturing. In this method, the power of a focused beam is modulated while scanning the photoresist. This article describes an iterative deconvolution method for determining the exposure pattern. This approach is computationally efficient as there is no gradient calculation. Simulations demonstrate the accurate fabrication of a feature with sub-wavelength geometry.

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