论文信息 - GaAs FETs having high output power per unit gate width

GaAs FETs having high output power per unit gate width

GaAs power FETs with output powers per unit gate width up to 1.4 W/mm have been fabricated. The factors contributing to this high output power are discussed.

H. Macksey | H.M. Macksey | F.H. Doerbeck | F. Doerbeck

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