论文信息 - Temperature Dependence of Gain Characteristics in P-Doped 1.3-μm Quantum Dot Lasers

Temperature Dependence of Gain Characteristics in P-Doped 1.3-μm Quantum Dot Lasers

We report the measured temperature dependence of gain characteristics in p-doped 1.3-μm quantum-dot lasers and indicate the relationship between their temperature-stability around room temperature and behavior of holes at the ground-state supplied by p-doping.

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