Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits

Abstract By using charge transfer complex silver and 2,3-dichloro-5,6-dicyano-p-benzoquinone (AgDDQ) modified silver as the bottom contact source/drain electrodes, high performance organic transistors and complementary inverter circuits using dinaphtho[2,3-b:2′,3’-f]thieno[3,2-b]thiophene (DNTT) as P-type organic semiconductors and N,N’-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2) as N-type organic semiconductors were demonstrated. Devices with Ag-DDQ bottom contact electrodes exhibit good compatibility for both P and N-type organic semiconductors, the transistors and inverters exhibit excellent stability after storing in air ambient for more than 40 days. The fabrication process is compatible with photolithography technology, which is applicable for large area integrated circuits. All these results indicate the potential application of Ag-DDQ modified electrodes in all-organic, flexible, and low-power electronics.

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