Resistive switching behavior in diamond-like carbon films grown by pulsed laser deposition for resistance switching random access memory application
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He Tian | Tian-Ling Ren | Xili Gao | Changjian Zhou | Xiaozhong Zhang | Dan Xie | Pinggang Peng | Yongyuan Zang | Yi Yang | T. Ren | H. Tian | Yi Yang | D. Xie | T. Feng | Changjian Zhou | Pinggang Peng | Yongyuan Zang | Xili Gao | Tingting Feng | Xiaozhong Zhang
[1] F. Zhuge,et al. Nonvolatile resistive switching memory based on amorphous carbon , 2010 .
[2] Qi Liu,et al. Resistive switching memory effect of ZrO2 films with Zr+ implanted , 2008 .
[3] Jae Hyuck Jang,et al. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.
[4] C. Charitidis,et al. Nanomechanical and nanotribological properties of carbon-based thin films: A review , 2010 .
[5] W. Lu,et al. CMOS compatible nanoscale nonvolatile resistance switching memory. , 2008, Nano letters.
[6] R. Waser,et al. Nanoionics-based resistive switching memories. , 2007, Nature materials.
[7] Woong Jung,et al. Bipolar resistance switching characteristics in a thin Ti–Ni–O compound film , 2009, Nanotechnology.
[8] Preparation and Characteristics of Nanoscale Diamond-Like Carbon Films for Resistive Memory Applications , 2010 .
[9] James M Tour,et al. Electronic two-terminal bistable graphitic memories. , 2008, Nature materials.
[10] Beng Kang Tay,et al. Raman studies of tetrahedral amorphous carbon films deposited by filtered cathodic vacuum arc , 1998 .
[11] Haralampos Pozidis,et al. Resistance switching at the nanometre scale in amorphous carbon , 2011 .
[12] Yuchao Yang,et al. Multilevel resistance switching in Cu/TaOx/Pt structures induced by a coupled mechanism , 2010 .
[13] G. I. Meijer,et al. Who Wins the Nonvolatile Memory Race? , 2008, Science.
[14] Young-soo Park,et al. Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory , 2007 .
[15] P. Griffin,et al. Resistive Switching Mechanism in $\hbox{Zn}_{x}\hbox{Cd}_{1 - x}\hbox{S}$ Nonvolatile Memory Devices , 2007, IEEE Electron Device Letters.
[16] John Robertson,et al. Resonant Raman spectroscopy of disordered, amorphous, and diamondlike carbon , 2001 .
[17] Jin Pyo Hong,et al. Al electrode dependent transition to bipolar resistive switching characteristics in pure TiO2 films , 2008 .
[18] Jehoshua Bruck,et al. Graphene-based atomic-scale switches. , 2008, Nano letters.
[19] F. Zhuge,et al. Nonvolatile resistive switching in graphene oxide thin films , 2009 .
[20] H. Im,et al. Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films , 2007 .
[21] Masateru Taniguchi,et al. Resistive switching multistate nonvolatile memory effects in a single cobalt oxide nanowire. , 2010, Nano letters.
[22] R. Waser,et al. Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories , 2009 .
[23] F. Zeng,et al. Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. , 2009, Nano letters.
[24] James M Tour,et al. Lithographic graphitic memories. , 2009, ACS nano.
[25] G. Yi,et al. Nonvolatile memory devices based on few-layer graphene films , 2010, Nanotechnology.
[26] R. Dittmann,et al. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.
[27] Litian Liu,et al. Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM Devices , 2011, IEEE Electron Device Letters.