Properties of the planar poly(3‐octylthiophene)/aluminum Schottky barrier diode

Formation and characterization of planar polymer Schottky barrier diodes are presented. Electrical characteristics of planar aluminium‐poly(3‐octylthiophene) Schottky barrier diodes are studied with emphasis on the current transport mechanisms. The device exhibits nearly ideal diode behavior in dark with an ideality factor of n=1.2. Temperature dependence of the current‐voltage characteristics of the diode is studied in the range 170–370 K. Agreement with the diffusion theory of metal‐semiconductor rectification is demonstrated for high temperatures T≳300 K. For temperatures less than room temperatures tunneling is proposed to be the dominant current transport mechanism.

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