Three-point method of prediction of MOS device response in space environments

A method for low-dose-rate MOS device response prediction based on the linear dependence between positive oxide charge anneal and interface states build-up is presented and experimentally verified. A linear relationship is seen to exist between the build-up of slow interface states and oxide trapped hole annealing. The physical explanation of the correlation between the number of trapped holes annealed and the number of interface states generated can be given in both hydrogen and trapped hole conversion models on a phenomenological basis. It is suggested that there is a one-to-K/sub Oi/ relationship (where K/sub Oi/ is some phenomenological constant) between the number of trapped holes annealed and the number of interface states generated. >

[1]  T. R. Oldham,et al.  Response of interface traps during high-temperature anneals (MOSFETs) , 1991 .

[2]  N. Saks,et al.  Interface trap formation via the two-stage H/sup +/ process , 1989 .

[3]  R. K. Lawrence,et al.  Post-irradiation behavior of the interface state density and the trapped positive charge , 1990 .

[4]  H. E. Boesch,et al.  The nature of the trapped hole annealing process , 1989 .

[5]  W. Jenkins,et al.  A comparison of methods for simulating low dose-rate gamma ray testing of MOS devices , 1991 .

[6]  Kenneth F. Galloway,et al.  Dose-rate effects on the total-dose threshold-voltage shift of power MOSFETs , 1988 .

[7]  Daniel M. Fleetwood,et al.  Hardness assurance for low-dose space applications (MOS devices) , 1991 .

[8]  A. H. Johnston,et al.  A comparison of methods for total dose testing of bulk CMOS and CMOS/SOS devices , 1990 .

[9]  Daniel M. Fleetwood,et al.  Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments , 1988 .

[10]  Daniel M. Fleetwood,et al.  Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices , 1990 .

[11]  Anant G. Sabnis,et al.  Characterization of Annealing of Co60 Gamma-Ray Damage at the Si/Si02 Interface , 1983, IEEE Transactions on Nuclear Science.

[12]  J. Benedetto,et al.  Saturation of Threshold Voltage Shift in MOSFET's at High Total Dose , 1986, IEEE Transactions on Nuclear Science.

[13]  K. F. Galloway,et al.  A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics , 1984, IEEE Transactions on Nuclear Science.

[14]  P. S. Winokur,et al.  Predicting CMOS Inverter Response in Nuclear and Space Environments , 1983, IEEE Transactions on Nuclear Science.

[15]  Allan H. Johnston,et al.  A Framework for an Integrated Set of Standards for Ionizing Radiation Testing of Microelectronics , 1987, IEEE Transactions on Nuclear Science.

[16]  N. Saks,et al.  Observation of H/sup +/ motion during interface trap formation , 1990 .

[17]  F. B. McLean.  Generic impulse response function for MOS systems and its application to linear response analysis , 1988 .

[18]  R. L. Pease,et al.  An improved standard total dose test for CMOS space electronics , 1989 .

[19]  B. J. Mrstik,et al.  Si-SiO/sub 2/ interface state generation during X-ray irradiation and during post-irradiation exposure to a hydrogen ambient (MOSFET) , 1991 .

[20]  Daniel M. Fleetwood,et al.  Theory and application of dual-transistor charge separation analysis , 1989 .

[21]  S. Lai,et al.  Interface trap generation in silicon dioxide when electrons are captured by trapped holes , 1983 .

[22]  A. H. Johnston,et al.  Application of a model for treatment of time dependent effects on irradiation of microelectronic devices , 1989 .