Photoluminescence of CdTe doped with arsenic and antimony acceptors

A detailed characterization of the impurity centers involved in the photoluminescence (PL) of p‐type CdTe doped with arsenic (As) and antimony (Sb) has been performed. The PL spectrum has been measured from 1.35 eV up to the band edge and as a function of temperature (4.2 up to 30 K). In addition to the familiar broad PL line centered at 1.45 eV and present in undoped and doped materials, the doped samples exhibit a new band near 1.54 eV showing a fine structure composed of two peaks whose intensities vary with temperature. The observed longitudinal optical (LO) phonon replicas associated with the zero‐phonon lines, at 1.45 eV and 1.54 eV, respectively, are characterized by a Huang‐Rhys factor S=1.3±0.1 and S=0.30±0.02. The various electron‐hole recombination processes are explained by means of a simple analytic model correlating the position of the zero‐phonon lines to the relative intensities of the phonon side bands. The model accounts for the chemical shift of the defect centers and describes the effe...

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