Advantages of metal-insulator-semiconductor structures for silicon solar cells
暂无分享,去创建一个
[1] A. W. Blakers,et al. Silicon solar cells with reduced temperature sensitivity , 1982 .
[2] M. Green,et al. 678-mV open-circuit voltage silicon solar cells , 1981 .
[3] M. A. Shibib,et al. An analytic model for minority-carrier transport in heavily doped regions of silicon devices , 1981, IEEE Transactions on Electron Devices.
[4] G. A. Candela,et al. Measurement of the interlayer between aluminum and silicon dioxide using ellipsometric, capacitance-voltage and auger electron spectroscopy techniques , 1981 .
[5] R. D. Nasby,et al. High efficiency silicon cells for luminescent solar concentrators , 1981 .
[6] H. Lanyon. The physics of heavily doped n+-p junction solar cells , 1981 .
[7] D. Redfield. Heavy-doping effects in silicon - The role of Auger processes , 1981 .
[8] Martin A. Green,et al. Review of conductor-insulator-semiconductor (CIS) solar cells , 1981 .
[9] J. Snel. The doped Si/SiO2 interface , 1981 .
[10] R. S. Bauer,et al. Au and Al interface reactions with SiO2 , 1980 .
[11] J. Grimshaw,et al. Photon-induced degradation in crystalline silicon Schottky barrier solar cells , 1980 .
[12] O. Krivanek,et al. The structure of ultrathin oxide on silicon , 1980 .
[13] Gerald D. Mahan,et al. Energy gap in Si and Ge: Impurity dependence , 1980 .
[14] N. G. Tarr,et al. The superposition principle for homojunction solar cells , 1980, IEEE Transactions on Electron Devices.
[15] M. Green,et al. High Efficiency Silicon Solar Cells Using Minority Carrier MIS Structures , 1980 .
[16] P. Siffert,et al. Further results on the aging of silicon Schottky diodes: Influence of the metal , 1979 .
[17] M. Green,et al. High‐temperature lifetesting of Al/SiOx/p‐Si contacts for MIS solar cells , 1979 .
[18] M. Green,et al. 655 mV open-circuit voltage, 17.6% efficient silicon MIS solar cells , 1979 .
[19] N. G. Tarr,et al. New experimental evidence for minority‐carrier MIS diodes , 1979 .
[20] R. Mertens,et al. Measurement of the minority carrier transport parameters in heavily doped silicon , 1980, 1978 International Electron Devices Meeting.
[21] Martin A. Green,et al. Effects of pinholes, oxide traps, and surface states on MIS solar cells , 1978 .
[22] Y. Kamigaki,et al. Formation and Properties of Thin Tunnelable SiO2 Films Using a Vaporized O 2 Source at Liquid N 2 Temperature , 1978 .
[23] J. Dziewior,et al. Auger coefficients for highly doped and highly excited silicon , 1977 .
[24] R. D'aiello,et al. P+/N high‐efficiency silicon solar cells , 1977 .
[25] E. S. Rittner,et al. Improved theory of the silicon p-n junction solar cell , 1977 .
[26] Martin A. Green,et al. MIS solar cell—General theory and new experimental results for silicon , 1976 .
[27] M. Green. Resistivity dependence of silicon solar cell efficiency and its enhancement using a heavily doped back contact region , 1976, IEEE Transactions on Electron Devices.
[28] J. Shewchun,et al. Temperature dependence of current flows in nondegenerate MIS tunnel diodes , 1975 .
[29] F. D. King,et al. Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory☆ , 1974 .
[30] Hiroshi Inose,et al. Three-stage time-division switching network by time-slot-interchange principle , 1966 .