Cellular automaton approach for semiconductor transport

Recently, a new simulation strategy has been adopted for the realistic modelling of transport processes in a variety of problems. The physical systems are replaced by fictitious microworld models obeying discrete cellular automata (CA) rules such that the macroscopic dynamics is recovered as the ensemble average over the microworld states [1, 2, 3, 4, 5]. In hydrodynamics, for example, Frisch and coworkers [6, 7] were able to show that lattice gas automata can provide an effective numerical technique for solving the Navier-Stokes and many other types of partial differential equations with complex boundary conditions.

[1]  Pierre Lallemand,et al.  Lattice Gas Hydrodynamics in Two and Three Dimensions , 1987, Complex Syst..

[2]  Cellular automata simulation of stationary and transient high-field transport in submicron Si and GaAs devices , 1992 .

[3]  P. Lugli,et al.  The Monte Carlo Method for Semiconductor Device Simulation , 1990 .

[4]  Sharief F. Babiker,et al.  Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs , 1996 .

[5]  B L H Wilson,et al.  Gallium Arsenide and Related Compounds , 1973 .

[6]  L. Risch,et al.  Vertical MOS Transistors with 70nm Channel Length , 1995, ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference.

[7]  R. K. Smith,et al.  Phase-space simplex Monte Carlo for semiconductor transport , 1994 .

[8]  M. Saraniti,et al.  Novel transport simulation of vertically-grown MOSFETs by cellular automaton method , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[9]  Y. Pomeau,et al.  Thermodynamics and Hydrodynamics for a Modeled Fluid , 1972 .

[10]  P. Lugli,et al.  A comparison of Monte Carlo and cellular automata approaches for semiconductor device simulation , 1993, IEEE Electron Device Letters.

[11]  L. Varani,et al.  Microscopic theory of electronic noise in semiconductor unipolar structures , 1994 .

[12]  Y. Pomeau,et al.  Lattice-gas automata for the Navier-Stokes equation. , 1986, Physical review letters.

[13]  Y. Pomeau,et al.  Time evolution of a two‐dimensional model system. I. Invariant states and time correlation functions , 1973 .

[14]  Tommaso Toffoli,et al.  Cellular Automata Machines , 1987, Complex Syst..

[16]  J. M. Chamberlain,et al.  Contact resistance to high-mobility AlGaAs/GaAs heterostructures , 1992 .

[17]  John von Neumann,et al.  Theory Of Self Reproducing Automata , 1967 .

[18]  Y. Pomeau,et al.  Molecular dynamics of a classical lattice gas: Transport properties and time correlation functions , 1976 .

[19]  K. G. Eggert,et al.  Lattice gas automata for flow through porous media , 1991 .

[20]  Siegfried Selberherr,et al.  Simulation of Semiconductor Devices and Processes , 1994, Springer Vienna.

[21]  Karl Hess,et al.  Monte Carlo Device Simulation: Full Band and Beyond , 1991 .

[22]  K. Heime,et al.  An improved model to explain ohmic contact resistance of f-GaAs and other semiconductors , 1986 .

[23]  Paolo Lugli,et al.  An efficient multigrid Poisson solver for device simulations , 1996, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[24]  Paul Manneville,et al.  Cellular Automata and Modeling of Complex Physical Systems , 1989 .

[25]  Vogl,et al.  Lattice-gas cellular-automaton method for semiclassical transport in semiconductors. , 1992, Physical review. B, Condensed matter.