Physical DC and thermal noise models of 18 nm double-gate junctionless p-type MOSFETs for low noise RF applications

In this paper, we describe an improved DC model for double-gate junctionless p-type MOSFET (pMOSFETs) that includes field-dependent mobility and doping-dependent diffusivity, using a modified Einstein’s relation for heavily doped semiconductors. The suggested new model was calibrated with experimental data. We also demonstrated a new noise model valid for all bias regions, as well as the calculated results for channel thermal noise and induced gate noise, and their correlation as a function of biasing conditions. This results provide physical insights into the noise properties of 18 nm double-gate junctionless pMOSFETs.

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