MOCVD layer growth of ZnSe using a new zinc source
暂无分享,去创建一个
[1] H. Kukimoto,et al. MOCVD Growth of ZnSxSe1-x Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and Se , 1985 .
[2] G. Fan,et al. On the growth of ZnSe on (100) GaAs by atmospheric pressure movpe , 1985 .
[3] P. Wright,et al. Metalorganic chemical vapour deposition of wide band gap II–VI compounds , 1984 .
[4] A. Sasaki,et al. Growth temperature dependence of crystallographic and luminescent properties of ZnSxSe1−x (0 ⪕ x ⪕ 1) by low-pressure MOVPE , 1984 .
[5] P. Wright,et al. The use of heterocyclic compounds in the organometallic chemical vapour deposition of epitaxial ZnS, ZnSe and ZnO , 1984 .
[6] K. Jones,et al. MOCVD growth of ZnSe films using diethylselenide , 1984 .
[7] W. Stutius. Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor deposition , 1982 .
[8] P. Wright,et al. The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressure , 1982 .
[9] B. Sermage,et al. High‐purity ZnSe obtained by metalorganic chemical vapor deposition epitaxy , 1981 .
[10] P. Hénoc,et al. Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour deposition , 1978 .