论文信息 - Emitter-Base Junction Size Effect on Current Gain Hfe of AlGaAs/GaAs Heterojunction Bipolar Transistors

Emitter-Base Junction Size Effect on Current Gain Hfe of AlGaAs/GaAs Heterojunction Bipolar Transistors

A current gain reduction with emitter-base junction size decrease is found in uniform base AlGaAs/GaAs heterojunction bipolar transistors (HBTs). This characteristic is analyzed using a model that takes into account a lateral diffusion of injected electrons, and is shown to be well explained by this model. The results show the importance of excess base leakage current due to minority carrier recombinations in the external bases of uniform base HBTs.

[1] R. Azoulay,et al. Double heterojunction GaAs-GaAlAs bipolar transistors grown by MOCVD for emitter coupled logic circuits , 1983, 1983 International Electron Devices Meeting.