135GHz CMOS small-signal amplifier with power-efficient bias method

A 135GHz CMOS wideband amplifier is proposed with high power efficiency to achieve a high-speed D-band wireless receiver. The proposed amplifier was fabricated with standard 1P12M 40nm CMOS technology. From measurement, the peak gain is 25dB with the power consumption was 140mW with a supply voltage of 1.1V. The amplifier achieved figure of merits of 25fJ. As a result, the performance characteristics required to realize a low-power front-end amplifier for a D-band wireless receiver were obtained.

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