Temperature dependence of the anomalous leakage current in polysilicon-on-insulator MOSFET's
暂无分享,去创建一个
P. J. Tobin | Sanjay K. Banerjee | S. Banerjee | B. Nguyen | P. Tobin | B.-Y. Nguyen | S. Bhattacharya | S. S. Bhattacharya
[1] A. Ortiz-Conde,et al. Subthreshold behavior of thin-film LPCVD PolySilicon MOSFET's , 1986, IEEE Transactions on Electron Devices.
[2] H. Shichijo,et al. Anomalous leakage current in LPCVD PolySilicon MOSFET's , 1985, IEEE Transactions on Electron Devices.
[3] G. Taylor,et al. Effects of hot-carrier trapping in n- and p-channel MOSFET's , 1983, IEEE Transactions on Electron Devices.
[4] S. M. Sze,et al. Physics of semiconductor devices , 1969 .
[5] Tetsuo Endoh,et al. An accurate model of subbreakdown due to band-to-band tunneling and some applications , 1988 .
[6] H. Shichijo,et al. Characteristics and Three-Dimensional Integration of MOSFET's in Small-Grain LPCVD Polycrystalline Silicon , 1985, IEEE Journal of Solid-State Circuits.
[7] Ping-Keung Ko,et al. Hot-carrier current modeling and device degradation in surface-channel p-MOSFETs , 1990 .
[8] A. C. Ipri,et al. A study of hydrogen passivation of grain boundaries in polysilicon thin-film transistors , 1989 .
[9] H. Shichijo,et al. Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon , 1985, IEEE Transactions on Electron Devices.
[10] I. Lundström,et al. Tunneling to traps in insulators , 1972 .
[11] C. Hu,et al. Lucky-electron model of channel hot-electron injection in MOSFET'S , 1984 .
[12] Ashwin Shah,et al. A Band-to-Band Tunneling Effect in the Trench Transistor Cell , 1987, 1987 Symposium on VLSI Technology. Digest of Technical Papers.
[13] D. Thomson,et al. Thermionic‐field emission from interface states at grain boundaries in silicon , 1984 .