A 6.25-GHz low DC power low-noise amplifier in SiGe

A 6.25-GHz monolithic low-noise amplifier (LNA) with a minimum noise figure of 2.2 dB and an associated gain of 20.4 dB implemented in a standard SiGe bipolar technology is presented. The 50-ohm noise figure is 3.5 dB with S21 of 18.3 dB. The circuit dissipates 9.4 mW from a 2.5-V supply (6.4 mW in the gain stages). The LNA's figure of merit gain/(P/sub DC//spl times/NF) of 0.56 mW/sup -1/ exceeds those of recently published 5 to 6 GHz GaAs MESFET and HBT LNA's.

[1]  S. Voinigescu,et al.  SiGe HBT technology: device and application issues , 1995, Proceedings of International Electron Devices Meeting.

[2]  Kevin W. Kobayashi,et al.  Ultra-low dc power GaAs HBT S- and C-band low noise amplifiers for portable wireless applications , 1995 .

[3]  Keith A. Jenkins,et al.  An 11-GHz 3-V SiGe voltage-controlled oscillator with integrated resonator , 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.

[4]  U. Lott.  Low DC power monolithic low noise amplifier for wireless applications at 5 GHz , 1996, IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.

[5]  Keith A. Jenkins,et al.  RF components implemented in an analog SiGe bipolar technology , 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.