Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells

[1]  Yung-Ting Chen,et al.  AlxGa1−xN/GaN band offsets determined by deep-level emission , 2001 .

[2]  Paolo Lugli,et al.  AlN and GaN epitaxial heterojunctions on 6H–SiC(0001): Valence band offsets and polarization fields , 1999 .

[3]  C. Manz,et al.  InxGa1−xN/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1−xN , 1999 .

[4]  J. Im,et al.  Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field , 1999 .

[5]  Alex Zunger,et al.  Resonant hole localization and anomalous optical bowing in InGaN alloys , 1999 .

[6]  Isamu Akasaki,et al.  Optical band gap in Ga1−xInxN (0 , 1998 .

[7]  Matthew D. McCluskey,et al.  LARGE BAND GAP BOWING OF INXGA1-XN ALLOYS , 1998 .

[8]  J. Im,et al.  Reduction of oscillator strength due to piezoelectric fields in G a N / A l x Ga 1 − x N quantum wells , 1998 .

[9]  Alex Zunger,et al.  Band gaps of GaPN and GaAsN alloys , 1997 .

[10]  D. Vanderbilt,et al.  Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997, cond-mat/9705105.

[11]  C. Walle,et al.  Small valence-band offsets at GaN/InGaN heterojunctions , 1997 .

[12]  Isamu Akasaki,et al.  Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells , 1997 .

[13]  Su-Huai Wei,et al.  Valence band splittings and band offsets of AlN, GaN, and InN , 1996 .

[14]  Hadis Morkoç,et al.  Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy , 1996 .

[15]  Michael Kunzer,et al.  Determination of the GaN/AlN band offset via the (/0) acceptor level of iron , 1994 .

[16]  J. Im,et al.  The role of piezoelectric fields in GaN-based quantum wells , 1998 .