论文信息 - Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout

Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout

It was demonstrated that Silicon Carbide Schottky Barrier Diodes exhibited anomalous charge collection with heavy ion irradiation. Consequently, the permanent damage and Single-Event Burnout was observed in spite of no known current sustaining mechanism. A model for the mechanism was proposed based on the device simulation

[1] D. Klaassen,et al. A new recombination model for device simulation including tunneling , 1992 .

[2] S. Matsuda,et al. Mechanism for single-event burnout of power MOSFETs and its characterization technique , 1992 .

[3] C. Pirri,et al. Surface analysis and defect characterization of 4H–SiC wafers for power electronic device applications , 2003 .

[4] K. Ng,et al. The Physics of Semiconductor Devices , 2019, Springer Proceedings in Physics.

[5] Gerhard Wachutka,et al. Charge carrier avalanche multiplication in high-voltage diodes triggered by ionizing radiation , 2000 .

[6] L. Scheick,et al. Displacement damage-induced catastrophic second breakdown in silicon carbide Schottky power diodes , 2004, IEEE Transactions on Nuclear Science.

[7] Bantval J. Baliga,et al. Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC , 1999 .

[8] N. Ikeda,et al. Improved model for single-event burnout mechanism , 2004, IEEE Transactions on Nuclear Science.

[9] Q. Wahab,et al. Ionization rates and critical fields in 4H silicon carbide , 1997 .