Handling inverted temperature dependence in static timing analysis

In digital circuit design, it is typically assumed that cell delay increases with decreasing voltage and increasing temperature. This assumption is the basis of the cornering approach with cell libraries in static timing analysis (STA). However, this assumption breaks down at low supply voltages because cell delay can decrease with increasing temperature. This phenomenon is caused by a competition between mobility and threshold voltage to dominate cell delay. We refer to this phenomenon as the inverted temperature dependence (ITD). Due to ITD, it becomes very difficult to analytically determine the temperatures that maximize or minimize the delay of a cell or a path. As such, ITD has profound consequences for STA: (1) ITD essentially invalidates the approach of defining corners by independently varying voltage and temperature; (2) ITD makes it more difficult to find short paths, leading to difficulties in detecting hold time violations; and (3) the effect of ITD will worsen as supply voltages decrease and threshold voltage variations increase. This article analyzes the consequences of ITD in STA and proposes a proper handling of ITD in an industrial sign-off STA tool. To the best of our knowledge, this article is the first such work.

[1]  W. Robert Daasch,et al.  Detection of temperature sensitive defects using ZTC , 2004, 22nd IEEE VLSI Test Symposium, 2004. Proceedings..

[2]  Kouichi Kanda,et al.  Design impact of positive temperature dependence of drain current in sub 1 V CMOS VLSIs , 1999, Proceedings of the IEEE 1999 Custom Integrated Circuits Conference (Cat. No.99CH36327).

[3]  Kiyoo Itoh,et al.  Supply voltage scaling for temperature insensitive CMOS circuit operation , 1998 .

[4]  S. Louis Hakimi,et al.  Fitting polygonal functions to a set of points in the plane , 1991, CVGIP Graph. Model. Image Process..

[5]  Michael T. Goodrich Efficient piecewise-linear function approximation using the uniform metric: (preliminary version) , 1994, SCG '94.

[6]  A. R. Newton,et al.  Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas , 1990 .

[7]  Jean Michel Daga,et al.  Temperature effect on delay for low voltage applications [CMOS ICs] , 1998, Proceedings Design, Automation and Test in Europe.

[8]  V. Gerousis Design and modeling challenges for 90 NM and 50 NM , 2003, Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003..

[9]  William H. Press,et al.  Numerical recipes in C , 2002 .

[10]  Ishiuchi,et al.  Alpha-Power Law MOSFET Model and its Applications to CMOS Inverter Delay and Other Formulas , 2004 .

[11]  Changhae Park,et al.  Reversal of temperature dependence of integrated circuits operating at very low voltages , 1995, Proceedings of International Electron Devices Meeting.

[12]  Michael T. Goodrich Efficient piecewise-linear function approximation using the uniform metric , 1995, Discret. Comput. Geom..

[13]  Kouichi Kanda,et al.  Design impact of positive temperature dependence of drain current in sub 1 V CMOS VLSIs , 1999 .

[14]  I. Filanovsky,et al.  Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits , 2001 .