论文信息 - High mobility SiMOSFETs fabricated in a full 300 mm CMOS process - 字舞流文

High mobility SiMOSFETs fabricated in a full 300 mm CMOS process

B. Govoreanu | I. Radu | S. Kubicek | P. Van Dorpe | T. N. Camenzind | D. Zumbühl | F. Mohiyaddin | J. Jussot | A. Elsayed | Ruoyu Li