Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode
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S. Kennerly | M. Dudley | B. Raghothamachar | R. Ghandi | P. Thieberger | Shan-Yang Hu | Yafei Liu | Hongyu Peng | Zeyu Chen | Q. Cheng
[1] M. Dudley,et al. Characterization of 4H-SiC Lattice Damage After Novel High Energy Ion Implantation , 2021, ECS Transactions.
[2] Xuan Zhang,et al. An investigation on structures and strains of gas-ion-implanted and post-implantation-annealed SiC , 2020 .
[3] M. Dudley,et al. Studies on Lattice Strain Variation due to Nitrogen Doping by Synchrotron X-ray Contour Mapping Technique in PVT-Grown 4H-SiC Crystals , 2019, Journal of Electronic Materials.
[4] P. Losee,et al. Novel high-energy ion implantation facility using a 15 MV Tandem Van de Graaff accelerator , 2019, Nuclear Instruments and Methods in Physics Reseach B.
[5] Y. Mori,et al. Inducing defects in 3.3 kV SiC MOSFETs by annealing after ion implantation and evaluating their effect on bipolar degradation of the MOSFETs , 2018, Semiconductor Science and Technology.
[6] M. Dudley,et al. Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography , 2018, Journal of Electronic Materials.
[7] A. Hallén,et al. Ion implantation technology for silicon carbide , 2016 .
[8] H. Tsuchida,et al. Annealing induced extended defects in as-grown and ion-implanted 4H–SiC epitaxial layers , 2010 .
[9] A. Henry,et al. Doping-induced strain in N-doped 4H-SiC crystals , 2003 .
[10] S. Stock,et al. The measurement of strain fields by X-ray topographic contour mapping , 1986 .