U-band MMIC HBT DRO

A 46.3 GHz dielectric resonator stabilized oscillator (DRO) using AlGaAs/GaAs heterojunction bipolar transistor (HBT) and monolithic microwave integrated circuit (MMIC) technology has been designed, fabricated, and characterized. The oscillator exhibits 2.6 dBm output power with 5.8% dc-to-RF efficiency and less than /spl minus/132 dBc/Hz phase noise at 5 MHz offset from the carrier. To our knowledge, this is the highest frequency oscillator ever reported using HBT devices and MMIC technology. >

[1]  Seng-Woon Chen,et al.  A Unified Design of Dielectric Resonator Oscillators for Telecommunication Systems , 1986, 1986 IEEE MTT-S International Microwave Symposium Digest.

[2]  K. K. Agarwal.  Dielectric Resonator Oscillators Using GaAs/(Ga,A1)As Heterojunction Bipolar Transistors , 1986, 1986 IEEE MTT-S International Microwave Symposium Digest.