论文信息 - The failure mechanisms and phase formation for Ni, Co and Cu contacts on ion implanted (0 0 1)Si under high current stress

The failure mechanisms and phase formation for Ni, Co and Cu contacts on ion implanted (0 0 1)Si under high current stress

Abstract Ultrafast diffusion of Ni and Cu atoms in p+-Si channel was observed. Contact failed at negative contact first, possibly by electron–hole recombination at the negative electrode. Ti diffusion assisted by Cu under high current density was observed in the Cu and Ti multilayered samples. Ti atoms at Ti contact cannot migrate into the diffusion channel but can be carried by Cu atoms. In addition, Cu and Ti easily interdiffused under high current density.

S. L. Cheng | Lun-Lun Chen | H. H. Lin

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