Ion implantation into non-planar targets: Monto Carlo simulations and analytical models

Analytical calculations of two-dimensional implantation profiles taking into account the different stopping powers in mask and substrate are compared to Monte Carlo simulations. It is shown that a good descriptions can be obtained by analytic exptessions. When the doping of vertical walls (e.g. in the case of deep trenches) is of importance, only Monte Carlo simulations lead to exact results. The lateral spread assumed to be depth independent in all analytical models shows slight differences to the Monte Carlo results.