论文信息 - Low-leakage diode string designs using triple-well technologies for RF-ESD applications

Low-leakage diode string designs using triple-well technologies for RF-ESD applications

This letter proposes a novel low-leakage diode string designs using triple-well technologies in 0.18-/spl mu/m CMOS process for RF-electrostatic discharge (RF-ESD) applications. Based on the characteristics of the low-leakage current and low-capacitance in the triple-well diode string, it is convenient to apply it in RF-ESD (electrostatic discharge) protection circuit designs. As compared to the conventional p/sup +//n-well diode string, the substrate leakage current can be kept very small all the time before the triple-well diode string turns on. It results from the existence of the parasitic base-emitter tied p-n-p bipolar transistor in each triple-well diode.

Tung-Yang Chen | Tien-Hao Tang | Chiu-Hsiang Chou | Jenkon Chen | Shiao-Shien Chen

[1] Transmission gate switch for ESD protection of RF pad , 2002 .

[2] Tung-Yang Chen,et al. Investigation of ESD devices in 0.18 /spl mu/m SiGe BiCMOS process , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

[3] M. Ker. Whole-chip ESD protection design with efficient VDD-to-VSS ESD clamp circuits for submicron CMOS VLSI , 1999 .

[4] Timothy J. Maloney,et al. Novel clamp circuits for IC power supply protection , 1995 .

[5] C. Papadas,et al. A novel SCR ESD protection for triple well CMOS technologies , 2001, IEEE Electron Device Letters.

[6] Timothy J. Maloney,et al. Designing on-chip power supply coupling diodes for ESD protection and noise immunity☆ , 1994 .

[7] Ming-Dou Ker,et al. Design on the low-leakage diode string for using in the power-rail ESD clamp circuits in a 0.35-/spl mu/m silicide CMOS process , 2000, IEEE Journal of Solid-State Circuits.

[8] Tung-Yang Chen,et al. On-chip ESD protection design by using polysilicon diodes in CMOS process , 2001 .

[9] Steven H. Voldman,et al. Mixed-voltage interface ESD protection circuits for advanced microprocessors in shallow trench and LOCOS isolation CMOS technologies , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.