Explosive crystallization of amorphous Si3N4 films on silicon during silicon laser melting
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[1] Hydrogen as the cause of pit formation during laser recrystallization of silicon‐on‐insulator films , 1989 .
[2] B. Zaitsev,et al. The structure of silicon nitride films. II. Non‐stoichiometric silicon nitride , 1978 .
[3] Y. Endo,et al. Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor Silicon , 1973 .
[4] Y. Akasaka,et al. Orientation control of the silicon film on insulator by laser recrystallization , 1987 .
[5] H. Maes,et al. Incorporation of nitrogen in Si3N4‐capped silicon by cw Ar+‐laser melting , 1993 .
[7] H. Maes,et al. A semiempirical model for the laser‐induced molten zone in the laser recrystallization process , 1987 .