A wafer-level diamond bonding process to improve power handling capability of submillimeter-wave Schottky diode frequency multipliers

We have developed a robust wafer-level substrate bonding process that has allowed us to bond CVD diamond to GaAs membrane-based submillimeter-wave Schottky diode frequency multipliers. The high thermal conductivity of CVD diamond allows the chip to dissipate heat more efficiently thus increasing the power handling capability of the chips. This process has resulted in single-chip multiplier devices working in the submillimeter-wave range that can handle hundreds of milliwatts of input power. Output powers of 40 mW at 250 GHz and 27 mW at 300 GHz from a single chip have been demonstrated with this method. It is expected that by power combining these chips it is now possible to achieve a wideband 300 GHz signal with more than 100 mW of power. This represents a dramatic improvement in the current state of the art and allows one to begin realizing submillimeter-wave radar applications.

[1]  I. Mehdi,et al.  Fabrication of 200 to 2700 GHz multiplier devices using GaAs and metal membranes , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[2]  John B. Shoven,et al.  I , Edinburgh Medical and Surgical Journal.

[3]  Choonsup Lee,et al.  In-Phase Power-Combined Frequency Triplers at 300 GHz , 2008, IEEE Microwave and Wireless Components Letters.

[4]  THz Technology , 2022, 6G: The Next Horizon.

[5]  I. Mehdi,et al.  Tunable broadband frequency-multiplied terahertz sources , 2008, 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves.

[6]  A. Kurdoghlian,et al.  GaN HFET for W-band Power Applications , 2006, 2006 International Electron Devices Meeting.

[7]  D. Twitchen,et al.  Anisotropic dry etching of boron doped single crystal CVD diamond , 2005 .