Capacitance and Conductance for an MOS System in Inversion, with Oxide Capacitance and Minority Carrier Lifetime Extractions
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P. Hurley | R. Rios | K. Kuhn | S. Monaghan | K. Cherkaoui | E. O'Connor | I. Povey | L. Floyd | F. Ferdousi | Eimear Ryan